Literature DB >> 21538583

Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons.

Jang-Sik Lee1, Yong-Mu Kim, Jeong-Hwa Kwon, Jae Sung Sim, Hyunjung Shin, Byeong-Hyeok Sohn, Quanxi Jia.   

Abstract

Mesh：

Year:  2011        PMID： 21538583     DOI： 10.1002/adma.201004150

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  5 in total

1.  Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

Authors:  Ye Zhou; Su-Ting Han; Prashant Sonar; V A L Roy
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

Authors:  Minji Kang; Dongyoon Khim; Won-Tae Park; Jihong Kim; Juhwan Kim; Yong-Young Noh; Kang-Jun Baeg; Dong-Yu Kim
Journal:  Sci Rep       Date:  2015-07-23       Impact factor: 4.379

3.  Solution processed molecular floating gate for flexible flash memories.

Authors:  Ye Zhou; Su-Ting Han; Yan Yan; Long-Biao Huang; Li Zhou; Jing Huang; V A L Roy
Journal:  Sci Rep       Date:  2013-10-31       Impact factor: 4.379

4.  Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.

Authors:  Yanmei Sun; Dianzhong Wen; Xuduo Bai; Junguo Lu; Chunpeng Ai
Journal:  Sci Rep       Date:  2017-06-21       Impact factor: 4.379

5.  Ordered Monolayer Gold Nano-urchin Structures and Their Size Induced Control for High Gas Sensing Performance.

Authors:  Ylias M Sabri; Ahmad Esmaielzadeh Kandjani; Samuel J Ippolito; Suresh K Bhargava
Journal:  Sci Rep       Date:  2016-04-19       Impact factor: 4.379
  5 in total

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