Literature DB >> 21534554

Vibrational origin of the thermal stability in the high-performance piezoelectric material GaAsO4.

O Cambon1, G M Bhalerao, D Bourgogne, J Haines, P Hermet, D A Keen, M G Tucker.   

Abstract

Theoretical calculations and experiments show the absence of libration modes of the tetrahedra in GaAsO(4), the most α-quartz-type distorted material. In consequence, the degree of dynamic disorder at high temperature is very low, making GaAsO(4) of high interest for high-temperature applications. This paper shows the importance of the theoretical calculations of vibration in oxide materials. In this way, it could be possible to extend this result to other materials and predict the thermal stability of the materials and their potential applications at high temperature.

Entities:  

Year:  2011        PMID: 21534554     DOI: 10.1021/ja202427x

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  1 in total

1.  Photodegradation of Si-doped GaAs nanowire.

Authors:  A C S Pimenta; H Limborço; J C González; N Cifuentes; Sérgio L L M Ramos; Franklin M Matinaga
Journal:  RSC Adv       Date:  2019-12-02       Impact factor: 3.361

  1 in total

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