| Literature DB >> 21523265 |
Hui-Ying Li1, Hai-Feng Wang, Yang-Long Guo, Guan-Zhong Lu, P Hu.
Abstract
Using first principles calculations for O vacancy diffusion on CeO(2)(111), we locate a surface diffusion mechanism, the two-step O vacancy exchange one, which is more favored than the most common hopping mechanism. By analyzing the results, we identify quantitatively the physical origin of why the two-step exchange mechanism is preferred.Entities:
Year: 2011 PMID: 21523265 DOI: 10.1039/c1cc11226k
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222