| Literature DB >> 21517339 |
C Brüne1, C X Liu, E G Novik, E M Hankiewicz, H Buhmann, Y L Chen, X L Qi, Z X Shen, S C Zhang, L W Molenkamp.
Abstract
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.Entities:
Year: 2011 PMID: 21517339 DOI: 10.1103/PhysRevLett.106.126803
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161