Literature DB >> 21517337

Tunable nonadiabatic excitation in a single-electron quantum dot.

M Kataoka1, J D Fletcher, P See, S P Giblin, T J B M Janssen, J P Griffiths, G A C Jones, I Farrer, D A Ritchie.   

Abstract

We report the observation of nonadiabatic excitations of single electrons in a quantum dot. Using a tunable-barrier single-electron pump, we have developed a way of reading out the excitation spectrum and level population of the dot by using the pump current as a probe. When the potential well is deformed at subnanosecond time scales, electrons are excited to higher levels. In the presence of a perpendicular magnetic field, the excited states follow a Fock-Darwin spectrum. Our experiments provide a simple model system to study nonadiabatic processes of quantum particles.

Year:  2011        PMID: 21517337     DOI: 10.1103/PhysRevLett.106.126801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Towards a quantum representation of the ampere using single electron pumps.

Authors:  S P Giblin; M Kataoka; J D Fletcher; P See; T J B M Janssen; J P Griffiths; G A C Jones; I Farrer; D A Ritchie
Journal:  Nat Commun       Date:  2012-07-03       Impact factor: 14.919

2.  Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

Authors:  Alessandro Rossi; Tuomo Tanttu; Fay E Hudson; Yuxin Sun; Mikko Möttönen; Andrew S Dzurak
Journal:  J Vis Exp       Date:  2015-06-03       Impact factor: 1.355

3.  Dynamics of a single-atom electron pump.

Authors:  J van der Heijden; G C Tettamanzi; S Rogge
Journal:  Sci Rep       Date:  2017-03-15       Impact factor: 4.379

4.  High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump.

Authors:  Gento Yamahata; Stephen P Giblin; Masaya Kataoka; Takeshi Karasawa; Akira Fujiwara
Journal:  Sci Rep       Date:  2017-03-21       Impact factor: 4.379

Review 5.  Unusual Quantum Transport Mechanisms in Silicon Nano-Devices.

Authors:  Giuseppe Carlo Tettamanzi
Journal:  Entropy (Basel)       Date:  2019-07-11       Impact factor: 2.524

6.  Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

Authors:  Sung Jin An; Myung-Ho Bae; Myoung-Jae Lee; Man Suk Song; Morten H Madsen; Jesper Nygård; Christian Schönenberger; Andreas Baumgartner; Jungpil Seo; Minkyung Jung
Journal:  Nanoscale Adv       Date:  2022-08-11

7.  Gigahertz single-trap electron pumps in silicon.

Authors:  Gento Yamahata; Katsuhiko Nishiguchi; Akira Fujiwara
Journal:  Nat Commun       Date:  2014-10-06       Impact factor: 14.919

8.  Three-waveform bidirectional pumping of single electrons with a silicon quantum dot.

Authors:  Tuomo Tanttu; Alessandro Rossi; Kuan Yen Tan; Akseli Mäkinen; Kok Wai Chan; Andrew S Dzurak; Mikko Möttönen
Journal:  Sci Rep       Date:  2016-11-08       Impact factor: 4.379

  8 in total

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