Literature DB >> 21469877

Anionic and hidden hydrogen in ZnO.

Mao-Hua Du1, Koushik Biswas.   

Abstract

First-principles calculations are performed to study energetics and kinetics of hydrogen in ZnO, in particular, the H(-) anion and the H(2) molecule on the interstitial site and in the oxygen vacancy. We show that the H(2) molecule kinetically trapped in the oxygen vacancy, rather than interstitial H(2), can explain a variety of experimental observations on "hidden" hydrogen in ZnO. The accumulation of shallow donors, especially the substitutional H, near the ZnO surface is important to the formation of hidden hydrogen in the ZnO bulk and can also lead to persistent photoconductivity.

Entities:  

Year:  2011        PMID: 21469877     DOI: 10.1103/PhysRevLett.106.115502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  An oxyhydride of BaTiO3 exhibiting hydride exchange and electronic conductivity.

Authors:  Yoji Kobayashi; Olivier J Hernandez; Tatsunori Sakaguchi; Takeshi Yajima; Thierry Roisnel; Yoshihiro Tsujimoto; Masaki Morita; Yasuto Noda; Yuuki Mogami; Atsushi Kitada; Masatoshi Ohkura; Saburo Hosokawa; Zhaofei Li; Katsuro Hayashi; Yoshihiro Kusano; Jung eun Kim; Naruki Tsuji; Akihiko Fujiwara; Yoshitaka Matsushita; Kazuyoshi Yoshimura; Kiyonori Takegoshi; Masashi Inoue; Mikio Takano; Hiroshi Kageyama
Journal:  Nat Mater       Date:  2012-04-15       Impact factor: 43.841

2.  Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

Authors:  Da-Ren Hang; Sk Emdadul Islam; Krishna Hari Sharma; Shiao-Wei Kuo; Cheng-Zu Zhang; Jun-Jie Wang
Journal:  Nanoscale Res Lett       Date:  2014-11-25       Impact factor: 4.703

3.  Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO.

Authors:  Honggang Ye; Zhicheng Su; Fei Tang; Mingzheng Wang; Guangde Chen; Jian Wang; Shijie Xu
Journal:  Sci Rep       Date:  2017-02-02       Impact factor: 4.379

4.  Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors.

Authors:  Hongfei Li; Yuzheng Guo; John Robertson
Journal:  Sci Rep       Date:  2017-12-04       Impact factor: 4.379

5.  Bistability of hydrogen in ZnO: origin of doping limit and persistent photoconductivity.

Authors:  Ho-Hyun Nahm; C H Park; Yong-Sung Kim
Journal:  Sci Rep       Date:  2014-02-18       Impact factor: 4.379

  5 in total

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