Literature DB >> 21469830

Observation of intrinsic inverse spin Hall effect.

Lalani K Werake1, Brian A Ruzicka, Hui Zhao.   

Abstract

We report observation of intrinsic inverse spin Hall effect in undoped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect.

Entities:  

Year:  2011        PMID: 21469830     DOI: 10.1103/PhysRevLett.106.107205

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Spin Hall effect devices.

Authors:  Tomas Jungwirth; Jörg Wunderlich; Kamil Olejník
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

2.  Influence of damping constant on inverse spin hall voltage of La0.7Sr0.3MnO3(x)/platinum bilayers.

Authors:  G Y Luo; C R Chang; J G Lin
Journal:  J Appl Phys       Date:  2014-01-31       Impact factor: 2.546

3.  Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator.

Authors:  H Geng; W Luo; W Y Deng; L Sheng; R Shen; D Y Xing
Journal:  Sci Rep       Date:  2017-06-16       Impact factor: 4.379

  3 in total

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