Literature DB >> 21462980

Activation of ultrathin oxide films for chemical reaction by interface defects.

Jaehoon Jung1, Hyung-Joon Shin, Yousoo Kim, Maki Kawai.   

Abstract

Periodic density functional theory calculations revealed strong enhancement of chemical reactivity by defects located at the oxide-metal interface for water dissociation on ultrathin MgO films deposited on Ag(100) substrate. Accumulation of charge density at the oxide-metal interface due to irregular interface defects influences the chemical reactivity of MgO films by changing the charge distribution at the oxide surface. Our results reveal the importance of buried interface defects in controlling chemical reactions on an ultrathin oxide film supported by a metal substrate.

Entities:  

Year:  2011        PMID: 21462980     DOI: 10.1021/ja200854g

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  1 in total

1.  Strain-induced water dissociation on supported ultrathin oxide films.

Authors:  Zhenjun Song; Jing Fan; Hu Xu
Journal:  Sci Rep       Date:  2016-03-08       Impact factor: 4.379

  1 in total

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