Literature DB >> 21446741

Structure and relaxation in germanium selenide glasses and supercooled liquids: a Raman spectroscopic study.

T G Edwards1, S Sen.   

Abstract

The structure of the tetrahedral backbone and the nature and time scale of the temperature-dependent structural changes in binary Ge-Se glasses and supercooled liquids with ≤33.33 atom % Ge have been investigated using ambient and high-temperature Raman spectroscopy. The composition dependence of the relative fractions of edge- and corner-shared GeSe(4) tetrahedra and that of the characteristic mean vibrational frequencies of these structural units are shown to be consistent with a structural model for these glasses based on a random interconnection between GeSe(4) tetrahedra and Se-Se chain fragments. The most prominent temperature-dependent structural change in the Ge(20)Se(80) glass and supercooled liquid involves progressive conversion of the edge-shared GeSe(4) tetrahedra into corner-shared tetrahedra, upon lowering of temperature. The time scale of this tetrahedral conversion "reaction" corresponds well with those of enthalpy and shear relaxation near glass transition. Moreover, the temperature dependence of this GeSe(4) tetrahedral speciation is shown to be the most important source for the production of configurational entropy in this supercooled liquid near the glass-transition range, signifying a direct link between structural relaxation, configurational entropy, and viscous flow.

Entities:  

Year:  2011        PMID: 21446741     DOI: 10.1021/jp202174x

Source DB:  PubMed          Journal:  J Phys Chem B        ISSN: 1520-5207            Impact factor:   2.991


  3 in total

1.  Observation of photobleaching in Ge-deficient Ge16.8Se83.2 chalcogenide thin film with prolonged irradiation.

Authors:  Sen Zhang; Yimin Chen; Rongping Wang; Xiang Shen; Shixun Dai
Journal:  Sci Rep       Date:  2017-11-06       Impact factor: 4.379

2.  Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures.

Authors:  Kheir S Albarkaty; Eric Kumi-Barimah; Jian Zhang; Zhiyong Yang; Gin Jose
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

3.  Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.

Authors:  Sheikh Ziaur Rahaman; Siddheswar Maikap; Atanu Das; Amit Prakash; Ya Hsuan Wu; Chao-Sung Lai; Ta-Chang Tien; Wei-Su Chen; Heng-Yuan Lee; Frederick T Chen; Ming-Jinn Tsai; Liann-Be Chang
Journal:  Nanoscale Res Lett       Date:  2012-11-06       Impact factor: 4.703

  3 in total

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