Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask.

We demonstrate a simple and versatile method for the fabrication of a submicron channel for an organic field-effect transistor (OFET) using a single electrospun fibre as a shadow mask. A single electrospun fibre is produced by an alternative switching electrospinning method and is stretched 2.5-fold. The average diameter of the stretched fibres is 302 nm. The stretched fibre is placed on ultrathin dielectric layers of aluminium oxide and a self-assembled monolayer (SAM). During electrode deposition the fibre acts as a very small shadow mask. After removing the fibre, electrodes with very narrow gaps of around 350 nm and with high uniformity are easily obtained. We fabricate an OFET by depositing pentacene as an active layer onto the electrodes. The OFET is operable at low voltages, with a threshold voltage of - 1.1 V and a subthreshold swing of 0.27 V decade(-1), values which are one order of magnitude lower than those obtained with a channel length of 75 µm.