High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography.

Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO(3)/Nb-doped SrTiO(3) substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO(3) layer, respectively.