Literature DB >> 21432911

High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO₂ high-k dielectric grown by spray pyrolysis in ambient air.

George Adamopoulos1, Stuart Thomas, Paul H Wöbkenberg, Donal D C Bradley, Martyn A McLachlan, Thomas D Anthopoulos.   

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Year:  2011        PMID: 21432911     DOI: 10.1002/adma.201003935

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


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  15 in total

1.  Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

Authors:  Yong-Hoon Kim; Jae-Sang Heo; Tae-Hyeong Kim; Sungjun Park; Myung-Han Yoon; Jiwan Kim; Min Suk Oh; Gi-Ra Yi; Yong-Young Noh; Sung Kyu Park
Journal:  Nature       Date:  2012-09-06       Impact factor: 49.962

2.  Electronic devices: Nanotube arrays made to order.

Authors:  Hagen Klauk
Journal:  Nat Nanotechnol       Date:  2013-03       Impact factor: 39.213

3.  Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement.

Authors:  Chun Zhao; Ce Zhou Zhao; Qifeng Lu; Xiaoyi Yan; Stephen Taylor; Paul R Chalker
Journal:  Materials (Basel)       Date:  2014-10-13       Impact factor: 3.623

4.  Comparative study on the catalytic activity of Fe-doped ZrO2 nanoparticles without significant toxicity through chemical treatment under various pH conditions.

Authors:  Hye-In Song; Jung A Hong; Hangil Lee; Kwang-Il Lim
Journal:  Sci Rep       Date:  2019-07-29       Impact factor: 4.379

5.  High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

Authors:  Wooseok Song; Soon Yeol Kwon; Sung Myung; Min Wook Jung; Seong Jun Kim; Bok Ki Min; Min-A Kang; Sung Ho Kim; Jongsun Lim; Ki-Seok An
Journal:  Sci Rep       Date:  2014-02-11       Impact factor: 4.379

6.  Dielectric relaxation of high-k oxides.

Authors:  Chun Zhao; Ce Zhou Zhao; Matthew Werner; Steve Taylor; Paul Chalker
Journal:  Nanoscale Res Lett       Date:  2013-11-01       Impact factor: 4.703

7.  Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.

Authors:  Manh-Cuong Nguyen; Mi Jang; Dong-Hwi Lee; Hyun-Jun Bang; Minjung Lee; Jae Kyeong Jeong; Hoichang Yang; Rino Choi
Journal:  Sci Rep       Date:  2016-04-28       Impact factor: 4.379

8.  High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.

Authors:  Yen-Hung Lin; Hendrik Faber; John G Labram; Emmanuel Stratakis; Labrini Sygellou; Emmanuel Kymakis; Nikolaos A Hastas; Ruipeng Li; Kui Zhao; Aram Amassian; Neil D Treat; Martyn McLachlan; Thomas D Anthopoulos
Journal:  Adv Sci (Weinh)       Date:  2015-05-26       Impact factor: 16.806

9.  Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors.

Authors:  Jewel Kumer Saha; Ravindra Naik Bukke; Narendra Naik Mude; Jin Jang
Journal:  Sci Rep       Date:  2020-06-02       Impact factor: 4.379

10.  Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors.

Authors:  Jinwon Lee; Keon-Hee Lim; Youn Sang Kim
Journal:  Sci Rep       Date:  2018-09-17       Impact factor: 4.379

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