Literature DB >> 21405331

Electron-induced rippling in graphene.

P San-Jose1, J González, F Guinea.   

Abstract

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may drive the graphene sheet into a quantum critical point characterized by the vanishing of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories, and leading to a zero-temperature buckling transition in which the order parameter is given by the square of the gradient of the flexural phonon field.

Entities:  

Year:  2011        PMID: 21405331     DOI: 10.1103/PhysRevLett.106.045502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Configuration of ripple domains and their topological defects formed under local mechanical stress on hexagonal monolayer graphene.

Authors:  Yeonggu Park; Jin Sik Choi; Taekjib Choi; Mi Jung Lee; Quanxi Jia; Minwoo Park; Hoonkyung Lee; Bae Ho Park
Journal:  Sci Rep       Date:  2015-03-24       Impact factor: 4.379

2.  Attractive force-driven superhardening of graphene membranes as a pin-point breaking of continuum mechanics.

Authors:  Makoto Ashino; Roland Wiesendanger
Journal:  Sci Rep       Date:  2017-04-18       Impact factor: 4.379

  2 in total

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