Literature DB >> 21405239

New structural picture of the Ge2Sb2Te5 phase-change alloy.

X Q Liu1, X B Li, L Zhang, Y Q Cheng, Z G Yan, M Xu, X D Han, S B Zhang, Z Zhang, E Ma.   

Abstract

Using electron microscopy and diffraction techniques, as well as first-principles calculations, we demonstrate that as much as 35% of the total Ge atoms in the cubic phase of Ge2Sb2Te5 locate in tetrahedral environments. The Ge-vacancy interactions play a crucial stabilizing role, leading to Ge-vacancy pairs and the sharing of vacancies that clusters tetrahedral Ge into domains. The Ge2Sb2Te5 structure with coexisting octahedral and tetrahedral Ge produces optical and structural properties in good agreement with experimental data and explains the property contrast as well as the rapid transformation in this phase-change alloy.

Entities:  

Year:  2011        PMID: 21405239     DOI: 10.1103/PhysRevLett.106.025501

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

2.  Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties.

Authors:  Mengjiao Xia; Keyuan Ding; Feng Rao; Xianbin Li; Liangcai Wu; Zhitang Song
Journal:  Sci Rep       Date:  2015-02-24       Impact factor: 4.379

3.  Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

Authors:  M Kriener; T Nakajima; Y Kaneko; A Kikkawa; X Z Yu; N Endo; K Kato; M Takata; T Arima; Y Tokura; Y Taguchi
Journal:  Sci Rep       Date:  2016-05-10       Impact factor: 4.379

4.  Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application.

Authors:  Yong Wang; Tianbo Wang; Yonghui Zheng; Guangyu Liu; Tao Li; Shilong Lv; Wenxiong Song; Sannian Song; Yan Cheng; Kun Ren; Zhitang Song
Journal:  Sci Rep       Date:  2018-10-11       Impact factor: 4.379

5.  Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation.

Authors:  Xinxing Sun; Martin Ehrhardt; Andriy Lotnyk; Pierre Lorenz; Erik Thelander; Jürgen W Gerlach; Tomi Smausz; Ulrich Decker; Bernd Rauschenbach
Journal:  Sci Rep       Date:  2016-06-13       Impact factor: 4.379

  5 in total

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