Experimental evidence for ferromagnetism at room temperature in MgO thin films.

Ferromagnetic ordering at room temperature (RTFM) in MgO thin films deposited by RF magnetron sputtering under various atmospheric conditions and temperatures is reported. A saturation magnetization (M(S)) value as high as 1.58 emu g(-1) is (0.046 μB/unit cell) observed for a 170 nm film deposited at RT under an oxygen pressure of 1.3 × 10(-4) mbar. In contrast, films deposited at elevated temperature (under an identical oxygen pressure), or at higher oxygen pressures, as well as under a nitrogen atmosphere at RT show significantly suppressed magnetization. The ferromagnetic order in the MgO matrix is believed to be defect induced.