Literature DB >> 21394361

Nonvolatile resistive switching in single crystalline ZnO nanowires.

Yuchao Yang1, Xiaoxian Zhang, Min Gao, Fei Zeng, Weiya Zhou, Sishen Xie, Feng Pan.   

Abstract

We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories.

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Year:  2011        PMID： 21394361     DOI： 10.1039/c1nr10096c

Source DB:  PubMed          Journal:  Nanoscale        ISSN： 2040-3364            Impact factor:   7.790


  8 in total

1.  Ferroelectric memory based on nanostructures.

Authors:  Xingqiang Liu; Yueli Liu; Wen Chen; Jinchai Li; Lei Liao
Journal:  Nanoscale Res Lett       Date:  2012-06-01       Impact factor: 4.703

2.  Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch.

Authors:  Shuang Gao; Fei Zeng; Minjuan Wang; Guangyue Wang; Cheng Song; Feng Pan
Journal:  Sci Rep       Date:  2015-10-21       Impact factor: 4.379

3.  Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

Authors:  Chi-Hsin Huang; Ta-Shun Chou; Jian-Shiou Huang; Shih-Ming Lin; Yu-Lun Chueh
Journal:  Sci Rep       Date:  2017-05-18       Impact factor: 4.379

4.  Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities.

Authors:  Gianluca Milano; Michael Luebben; Zheng Ma; Rafal Dunin-Borkowski; Luca Boarino; Candido F Pirri; Rainer Waser; Carlo Ricciardi; Ilia Valov
Journal:  Nat Commun       Date:  2018-12-04       Impact factor: 14.919

5.  Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices.

Authors:  Wei Wang; Ming Wang; Elia Ambrosi; Alessandro Bricalli; Mario Laudato; Zhong Sun; Xiaodong Chen; Daniele Ielmini
Journal:  Nat Commun       Date:  2019-01-08       Impact factor: 14.919

6.  A univariate ternary logic and three-valued multiplier implemented in a nano-columnar crystalline zinc oxide memristor.

Authors:  Qi-Lai Chen; Gang Liu; Ming-Hua Tang; Xin-Hui Chen; Yue-Jun Zhang; Xue-Jun Zheng; Run-Wei Li
Journal:  RSC Adv       Date:  2019-08-08       Impact factor: 3.361

7.  PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction.

Authors:  Baochang Cheng; Jie Zhao; Li Xiao; Qiangsheng Cai; Rui Guo; Yanhe Xiao; Shuijin Lei
Journal:  Sci Rep       Date:  2015-12-09       Impact factor: 4.379

Review 8.  Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Authors:  Firman Mangasa Simanjuntak; Debashis Panda; Kung-Hwa Wei; Tseung-Yuen Tseng
Journal:  Nanoscale Res Lett       Date:  2016-08-19       Impact factor: 4.703
  8 in total

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