Literature DB >> 21384443

High-performance programmable memory devices based on co-doped BaTiO3.

Zhibo Yan1, Yanyan Guo, Guoquan Zhang, J-M Liu.   

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Year:  2011        PMID： 21384443     DOI： 10.1002/adma.201004306

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  6 in total

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Authors:  Ying Wang; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-11       Impact factor: 3.623

2.  Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

Authors:  Souvik Kundu; Deepam Maurya; Michael Clavel; Yuan Zhou; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Shashank Priya
Journal:  Sci Rep       Date:  2015-02-16       Impact factor: 4.379

3.  Thermal crosstalk in 3-dimensional RRAM crossbar array.

Authors:  Pengxiao Sun; Nianduan Lu; Ling Li; Yingtao Li; Hong Wang; Hangbing Lv; Qi Liu; Shibing Long; Su Liu; Ming Liu
Journal:  Sci Rep       Date:  2015-08-27       Impact factor: 4.379

4.  Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

Authors:  Somsubhra Chakrabarti; Sreekanth Ginnaram; Surajit Jana; Zong-Yi Wu; Kanishk Singh; Anisha Roy; Pankaj Kumar; Siddheswar Maikap; Jian-Tai Qiu; Hsin-Ming Cheng; Ling-Na Tsai; Ya-Ling Chang; Rajat Mahapatra; Jer-Ren Yang
Journal:  Sci Rep       Date:  2017-07-05       Impact factor: 4.379

5.  Ultrafast synaptic events in a chalcogenide memristor.

Authors:  Yi Li; Yingpeng Zhong; Lei Xu; Jinjian Zhang; Xiaohua Xu; Huajun Sun; Xiangshui Miao
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

6.  Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.

Authors:  Z B Yan; J-M Liu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379
  6 in total

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