| Literature DB >> 21384054 |
Motoharu Imai1, Akira Sato, Haruhiko Udono, Yoji Imai, Hiroyuki Tajima.
Abstract
A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.Entities:
Year: 2011 PMID： 21384054 DOI： 10.1039/c1dt10071h
Source DB: PubMed Journal: Dalton Trans ISSN： 1477-9226 Impact factor: 4.390