Literature DB >> 21381130

A resistive memory in semiconducting BiFeO₃ thin-film capacitors.

An Quan Jiang1, Can Wang, Kui Juan Jin, Xiao Bing Liu, James F Scott, Cheol Seong Hwang, Ting Ao Tang, Hui Bin Lu, Guo Zhen Yang.   

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Year:  2011        PMID： 21381130     DOI： 10.1002/adma.201004317

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  12 in total

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2.  Memristive devices for computing.

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3.  Electrical and mechanical switching of ferroelectric polarization in the 70 nm BiFeO3 film.

Authors:  Liufang Chen; Zhihao Cheng; Wenting Xu; Xiangjian Meng; Guoliang Yuan; Junming Liu; Zhiguo Liu
Journal:  Sci Rep       Date:  2016-01-11       Impact factor: 4.379

4.  Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

Authors:  Wei Jin Hu; Zhihong Wang; Weili Yu; Tom Wu
Journal:  Nat Commun       Date:  2016-02-29       Impact factor: 14.919

5.  Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.

Authors:  Tiangui You; Xin Ou; Gang Niu; Florian Bärwolf; Guodong Li; Nan Du; Danilo Bürger; Ilona Skorupa; Qi Jia; Wenjie Yu; Xi Wang; Oliver G Schmidt; Heidemarie Schmidt
Journal:  Sci Rep       Date:  2015-12-22       Impact factor: 4.379

6.  High-performance ferroelectric non-volatile memory based on La-doped BiFeO3 thin films.

Authors:  Wanqiong Dai; Yuanxiang Li; Caihong Jia; Chaoyang Kang; Mengxin Li; Weifeng Zhang
Journal:  RSC Adv       Date:  2020-05-11       Impact factor: 3.361

7.  Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Authors:  Yao Shuai; Xin Ou; Wenbo Luo; Arndt Mücklich; Danilo Bürger; Shengqiang Zhou; Chuangui Wu; Yuanfu Chen; Wanli Zhang; Manfred Helm; Thomas Mikolajick; Oliver G Schmidt; Heidemarie Schmidt
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

8.  Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.

Authors:  Z B Yan; J-M Liu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor.

Authors:  Ji Hoon Jeon; Ho-Young Joo; Young-Min Kim; Duk Hyun Lee; Jin-Soo Kim; Yeon Soo Kim; Taekjib Choi; Bae Ho Park
Journal:  Sci Rep       Date:  2016-03-22       Impact factor: 4.379

10.  Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.

Authors:  Bo Bo Tian; Yang Liu; Liu Fang Chen; Jian Lu Wang; Shuo Sun; Hong Shen; Jing Lan Sun; Guo Liang Yuan; Stéphane Fusil; Vincent Garcia; Brahim Dkhil; Xiang Jian Meng; Jun Hao Chu
Journal:  Sci Rep       Date:  2015-12-16       Impact factor: 4.379
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