Literature DB >> 21375284

High-resolution field effect sensing of ferroelectric charges.

Hyoungsoo Ko1, Kyunghee Ryu, Hongsik Park, Chulmin Park, Daeyoung Jeon, Yong Kwan Kim, Juhwan Jung, Dong-Ki Min, Yunseok Kim, Ho Nyung Lee, Yoondong Park, Hyunjung Shin, Seungbum Hong.   

Abstract

Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm(2), which is equivalent to 1/20 electron per nanometer square at room temperature.

Mesh:

Substances:

Year:  2011        PMID: 21375284     DOI: 10.1021/nl103372a

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Charge gradient microscopy.

Authors:  Seungbum Hong; Sheng Tong; Woon Ik Park; Yoshiomi Hiranaga; Yasuo Cho; Andreas Roelofs
Journal:  Proc Natl Acad Sci U S A       Date:  2014-04-23       Impact factor: 11.205

2.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.