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Literature DB >> 21341309

Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.

Young Min Park¹, Jürgen Daniel, Martin Heeney, Alberto Salleo.

Abstract

Entities: Chemical

Mesh：

Substances：

Year: 2011 PMID： 21341309 DOI： 10.1002/adma.201003641

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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7 in total

1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

Authors: Yong-Hoon Kim; Jae-Sang Heo; Tae-Hyeong Kim; Sungjun Park; Myung-Han Yoon; Jiwan Kim; Min Suk Oh; Gi-Ra Yi; Yong-Young Noh; Sung Kyu Park
Journal: Nature Date: 2012-09-06 Impact factor: 49.962

2. Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing.

Authors: Linrun Feng; Wei Tang; Jiaqing Zhao; Ruozhang Yang; Wei Hu; Qiaofeng Li; Ruolin Wang; Xiaojun Guo
Journal: Sci Rep Date: 2016-02-10 Impact factor: 4.379

3. High Critical Current Density of YBa₂Cu₃O_7-x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process.

Authors: Yuanqing Chen; Weibai Bian; Wenhuan Huang; Xinni Tang; Gaoyang Zhao; Lingwei Li; Na Li; Wen Huo; Jiqiang Jia; Caiyin You
Journal: Sci Rep Date: 2016-12-01 Impact factor: 4.379

4. A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

Authors: Wei Cai; Zhennan Zhu; Jinglin Wei; Zhiqiang Fang; Honglong Ning; Zeke Zheng; Shangxiong Zhou; Rihui Yao; Junbiao Peng; Xubing Lu
Journal: Materials (Basel) Date: 2017-08-21 Impact factor: 3.623

Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.

1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

2. Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing.

3. High Critical Current Density of YBa₂Cu₃O_7-x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process.

4. A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

5. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.

6. Hybrid cluster precursors of the LaZrO insulator for transistors: lowering the processing temperature.

7. Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices.