Literature DB >> 21307531

Detection and Electrical Properties of Cd1-xZnxTe Detectors at Elevated Temperatures.

S U Egarievwe1, K T Chen, A Burger, R B James, C M Lisse.   

Abstract

We have studied the behavior of Cd1-xZnxTe detectors in the temperature range 24-70°C. The detector count rate stability and leakage currents are presented as a function of voltage, time, and temperature. Detector polarization due to bulk and surface effects leading to a decreased leakage current was observed. At 70°C, the position of the 32 keV photopeak of 133Ba was stable with time. The peak position varies within only 3 keV, and the peak quality factor varied between 0.31 and 0.41, for a 24 h period of operation at a 60 V bias. The net count to total count ratio was also stable, with values varying between 0.56 and 0.59. The net count to total count ratio decreased from 0.78 at 25°C to 0.71 at 60°C. The conclusion is that Cd1-xZnxTe is a promising material for gamma ray detection at temperatures above room temperature.

Entities:  

Year:  1996        PMID: 21307531     DOI: 10.3233/XST-1996-6401

Source DB:  PubMed          Journal:  J Xray Sci Technol        ISSN: 0895-3996            Impact factor:   1.535


  1 in total

1.  InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy.

Authors:  S Butera; G Lioliou; A B Krysa; A M Barnett
Journal:  Sci Rep       Date:  2017-08-31       Impact factor: 4.379

  1 in total

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