Literature DB >> 21280668

Examination of the possibility of negative capacitance using ferroelectric materials in solid state electronic devices.

C M Krowne1, S W Kirchoefer, W Chang, J M Pond, L M B Alldredge.   

Abstract

We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics. A basic equation governing all small signal behavior is derived, a negative capacitance quality factor is defined based upon it, and thousands of carefully measured devices are evaluated. We show that no instance of negative capacitance occurs within our huge database. Furthermore, we demonstrate that highly nonlinear biasing behavior in a series stack could be misinterpreted as giving a negative capacitance.

Year:  2011        PMID: 21280668     DOI: 10.1021/nl1037215

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Negative capacitance in multidomain ferroelectric superlattices.

Authors:  Pavlo Zubko; Jacek C Wojdeł; Marios Hadjimichael; Stéphanie Fernandez-Pena; Anaïs Sené; Igor Luk'yanchuk; Jean-Marc Triscone; Jorge Íñiguez
Journal:  Nature       Date:  2016-06-13       Impact factor: 49.962

2.  Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Authors:  Jae Hyo Park; Gil Su Jang; Hyung Yoon Kim; Ki Hwan Seok; Hee Jae Chae; Sol Kyu Lee; Seung Ki Joo
Journal:  Sci Rep       Date:  2016-04-21       Impact factor: 4.379

3.  Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

Authors:  Yu Jin Kim; Min Hyuk Park; Young Hwan Lee; Han Joon Kim; Woojin Jeon; Taehwan Moon; Keum Do Kim; Doo Seok Jeong; Hiroyuki Yamada; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-01-08       Impact factor: 4.379

  3 in total

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