Etched beam splitters in InP/InGaAsP.

An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.