Coupled effects of ion beam chemistry and morphology on directed self-assembly of epitaxial semiconductor nanostructures.

We study the coupled effects of ion beam chemistry and morphology on the assembly of templated epitaxial nanostructures. Using a focused ion beam (FIB) system equipped with a mass-selecting filter, we pattern Si substrates with local ion doses of Si, Ge and Ga to control subsequent Ge(x)Si(1 - x) epitaxial nanostructure assembly. This capability to employ different templating species allows us to study how different incorporated ion species in the near surface region affect the ability to localize nucleation during subsequent epitaxial growth. Our results indicate that FIB-directed self-assembly is a complex process, dependent on dose-induced morphology in addition to ion-specific chemical effects.