Literature DB >> 21231548

Fractional quantum Hall effect at high fillings in a two-subband electron system.

J Shabani1, Y Liu, M Shayegan.   

Abstract

Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2, 3, 4 and p=1, 2, 3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.

Year:  2010        PMID: 21231548     DOI: 10.1103/PhysRevLett.105.246805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as "Finger print".

Authors:  Syoji Yamada; Akira Fujimoto; Siro Hidaka; Masashi Akabori; Yasutaka Imanaka; Kanji Takehana
Journal:  Sci Rep       Date:  2019-05-15       Impact factor: 4.379

  1 in total

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