| Literature DB >> 21231322 |
W G Cullen1, M Yamamoto, K M Burson, J H Chen, C Jang, L Li, M S Fuhrer, E D Williams.
Abstract
High-resolution noncontact atomic force microscopy of SiO2 reveals previously unresolved roughness at the few-nm length scale, and scanning tunneling microscopy of graphene on SiO2 shows graphene to be slightly smoother than the supporting SiO2 substrate. A quantitative energetic analysis explains the observed roughness of graphene on SiO2 as extrinsic, and a natural result of highly conformal adhesion. Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.Entities:
Year: 2010 PMID: 21231322 DOI: 10.1103/PhysRevLett.105.215504
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161