Literature DB >> 21231247

Scaling theory for unipolar resistance switching.

J S Lee1, S B Lee, S H Chang, L G Gao, B S Kang, M-J Lee, C J Kim, T W Noh, B Kahng.   

Abstract

We investigate a reversible percolation system showing unipolar resistance switching in which percolating paths are created and broken alternately by the application of an electric bias. Owing to the dynamical changes in the percolating paths, different from those in classical percolating paths, a detailed understanding of the structure is demanding and challenging. Here, we develop a scaling theory that can explain the transport properties of these conducting paths; the theory is based on the fractal geometry of a percolating cluster. This theory predicts that two scaling behaviors emerge, depending on the topologies of the conducting paths. We confirm these theoretical predictions experimentally by observing material-independent universal scaling behaviors in unipolar resistance switching.

Year:  2010        PMID: 21231247     DOI: 10.1103/PhysRevLett.105.205701

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  6 in total

1.  Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Authors:  Shibing Long; Luca Perniola; Carlo Cagli; Julien Buckley; Xiaojuan Lian; Enrique Miranda; Feng Pan; Ming Liu; Jordi Suñé
Journal:  Sci Rep       Date:  2013-10-14       Impact factor: 4.379

2.  Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.

Authors:  Keundong Lee; Inrok Hwang; Sangik Lee; Sungtaek Oh; Dukhyun Lee; Cheol Kyeom Kim; Yoonseung Nam; Sahwan Hong; Chansoo Yoon; Robert B Morgan; Hakseong Kim; Sunae Seo; David H Seo; Sangwook Lee; Bae Ho Park
Journal:  Sci Rep       Date:  2015-07-10       Impact factor: 4.379

3.  Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.

Authors:  Dong-Hyeok Lim; Ga-Yeon Kim; Jin-Ho Song; Kwang-Sik Jeong; Dae-Hong Ko; Mann-Ho Cho
Journal:  Sci Rep       Date:  2015-10-22       Impact factor: 4.379

4.  Scaling effect on unipolar and bipolar resistive switching of metal oxides.

Authors:  Takeshi Yanagida; Kazuki Nagashima; Keisuke Oka; Masaki Kanai; Annop Klamchuen; Bae Ho Park; Tomoji Kawai
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

5.  Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Authors:  Seul Ji Song; Jun Yeong Seok; Jung Ho Yoon; Kyung Min Kim; Gun Hwan Kim; Min Hwan Lee; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2013-12-06       Impact factor: 4.379

6.  Switching Power Universality in Unipolar Resistive Switching Memories.

Authors:  Jongmin Kim; Kyooho Jung; Yongmin Kim; Yongcheol Jo; Sangeun Cho; Hyeonseok Woo; Seongwoo Lee; A I Inamdar; Jinpyo Hong; Jeon-Kook Lee; Hyungsang Kim; Hyunsik Im
Journal:  Sci Rep       Date:  2016-04-01       Impact factor: 4.379

  6 in total

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