Literature DB >> 21230855

Experimental realization of a three-dimensional topological insulator phase in ternary chalcogenide TlBiSe₂.

K Kuroda1, M Ye, A Kimura, S V Eremeev, E E Krasovskii, E V Chulkov, Y Ueda, K Miyamoto, T Okuda, K Shimada, H Namatame, M Taniguchi.   

Abstract

We report the first observation of a topological surface state on the (111) surface of the ternary chalcogenide TlBiSe₂ by angle-resolved photoemission spectroscopy. By tuning the synchrotron radiation energy we reveal that it features an almost ideal Dirac cone with the Dirac point well isolated from bulk continuum states. This suggests that TlBiSe₂ is a promising material for realizing quantum topological transport.

Entities:  

Year:  2010        PMID： 21230855     DOI： 10.1103/PhysRevLett.105.146801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  10 in total

1.  Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

Authors:  Chaoyu Chen; Shaolong He; Hongming Weng; Wentao Zhang; Lin Zhao; Haiyun Liu; Xiaowen Jia; Daixiang Mou; Shanyu Liu; Junfeng He; Yingying Peng; Ya Feng; Zhuojin Xie; Guodong Liu; Xiaoli Dong; Jun Zhang; Xiaoyang Wang; Qinjun Peng; Zhimin Wang; Shenjin Zhang; Feng Yang; Chuangtian Chen; Zuyan Xu; Xi Dai; Zhong Fang; X J Zhou
Journal:  Proc Natl Acad Sci U S A       Date:  2012-02-21       Impact factor: 11.205

2.  A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4.

Authors:  Gabriel Autès; Anna Isaeva; Luca Moreschini; Jens C Johannsen; Andrea Pisoni; Ryo Mori; Wentao Zhang; Taisia G Filatova; Alexey N Kuznetsov; László Forró; Wouter Van den Broek; Yeongkwan Kim; Keun Su Kim; Alessandra Lanzara; Jonathan D Denlinger; Eli Rotenberg; Aaron Bostwick; Marco Grioni; Oleg V Yazyev
Journal:  Nat Mater       Date:  2015-12-14       Impact factor: 43.841

3.  A search model for topological insulators with high-throughput robustness descriptors.

Authors:  Kesong Yang; Wahyu Setyawan; Shidong Wang; Marco Buongiorno Nardelli; Stefano Curtarolo
Journal:  Nat Mater       Date:  2012-05-13       Impact factor: 43.841

4.  Emergence of topological and topological crystalline phases in TlBiS2 and TlSbS2.

Authors:  Qingyun Zhang; Yingchun Cheng; Udo Schwingenschlögl
Journal:  Sci Rep       Date:  2015-02-11       Impact factor: 4.379

5.  Synthesis and characterization of 3D topological insulators: a case TlBi(S1-x Se x )2.

Authors:  Kouji Segawa
Journal:  Sci Technol Adv Mater       Date:  2015-02-25       Impact factor: 8.090

6.  Engineering Dirac electrons emergent on the surface of a topological insulator.

Authors:  Yukinori Yoshimura; Koji Kobayashi; Tomi Ohtsuki; Ken-Ichiro Imura
Journal:  Sci Technol Adv Mater       Date:  2015-01-16       Impact factor: 8.090

7.  Fermi level tuning of Ag-doped Bi2Se3 topological insulator.

Authors:  Eri Uesugi; Takaki Uchiyama; Hidenori Goto; Hiromi Ota; Teppei Ueno; Hirokazu Fujiwara; Kensei Terashima; Takayoshi Yokoya; Fumihiko Matsui; Jun Akimitsu; Kaya Kobayashi; Yoshihiro Kubozono
Journal:  Sci Rep       Date:  2019-03-29       Impact factor: 4.379

8.  Optically detecting the edge-state of a three-dimensional topological insulator under ambient conditions by ultrafast infrared photoluminescence spectroscopy.

Authors:  Shun-ya Maezawa; Hiroshi Watanabe; Masahiro Takeda; Kenta Kuroda; Takashi Someya; Iwao Matsuda; Tohru Suemoto
Journal:  Sci Rep       Date:  2015-11-10       Impact factor: 4.379

9.  Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film.

Authors:  Sheng-Shi Li; Wei-Xiao Ji; Chang-Wen Zhang; Shu-Jun Hu; Ping Li; Pei-Ji Wang; Bao-Min Zhang; Chong-Long Cao
Journal:  Sci Rep       Date:  2016-03-21       Impact factor: 4.379

10.  Topological phase transition and quantum spin Hall edge states of antimony few layers.

Authors:  Sung Hwan Kim; Kyung-Hwan Jin; Joonbum Park; Jun Sung Kim; Seung-Hoon Jhi; Han Woong Yeom
Journal:  Sci Rep       Date:  2016-09-14       Impact factor: 4.379
  10 in total

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