Literature DB >> 21201718

N,N'-Dicyclo-hexyl-naphthalene-1,8;4:5-dicarboximide.

Deepak Shukla1, Manju Rajeswaran.   

Abstract

The title compound, C(26)H(26)N(2)O(4), synthesized by the reaction of naphthalene-1,4,5,8-tetra-carboxylic acid anhydride and cyclo-hexyl-amine, exhibits good n-type semiconducting properties. Accordingly, thin-film transistor devices comprising this compound show n-type behavior with high field-effect electron moblity ca 6 cm(2)/Vs [Shukla, Nelson, Freeman, Rajeswaran, Ahearn, Meyer & Carey(2008 ▶). Chem. Mater. Submitted]. The asymmetric unit comprises one-quarter of the centrosymmetric mol-ecule in which all but two methyl-ene C atoms of the cyclo-hexane ring lie on a mirror plane; the point-group symmetry is 2/m. The naphthalene-diimide unit is strictly planar, and the cyclo-hexane rings adopt chair conformations with the diimide unit in an equatorial position on each ring.

Entities:  

Year:  2008        PMID: 21201718      PMCID: PMC2960487          DOI: 10.1107/S1600536808025221

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For general background on the semi-conducting properties and use of this class of material in organic thin-film transistor applications, see: Chesterfield et al. (2004a ▶,b ▶); Facceti et al. (2008 ▶); Jones et al. (2004 ▶); Katz et al. (2000a ▶,b ▶); Shukla et al. (2008 ▶).

Experimental

Crystal data

C26H26N2O4 M = 430.49 Monoclinic, a = 8.5410 (2) Å b = 6.6780 (2) Å c = 18.4270 (9) Å β = 102.4790 (18)° V = 1026.19 (6) Å3 Z = 2 Mo Kα radiation μ = 0.09 mm−1 T = 293 (2) K 0.35 × 0.25 × 0.17 mm

Data collection

Nonius KappaCCD diffractometer Absorption correction: none 3354 measured reflections 1227 independent reflections 787 reflections with I > 2σ(I) R int = 0.087

Refinement

R[F 2 > 2σ(F 2)] = 0.067 wR(F 2) = 0.182 S = 1.06 1227 reflections 91 parameters H-atom parameters constrained Δρmax = 0.39 e Å−3 Δρmin = −0.29 e Å−3 Data collection: COLLECT (Nonius, 2000 ▶); cell refinement: SCALEPACK (Otwinowski & Minor, 1997 ▶); data reduction: DENZO (Otwinowski & Minor, 1997 ▶) and SCALEPACK; program(s) used to solve structure: SIR97 (Altomare et al., 1999 ▶); program(s) used to refine structure: SHELXTL (Sheldrick, 2008 ▶); molecular graphics: SHELXTL; software used to prepare material for publication: publCIF (Westrip, 2007 ▶). Crystal structure: contains datablocks I, global. DOI: 10.1107/S1600536808025221/sj2528sup1.cif Structure factors: contains datablocks I. DOI: 10.1107/S1600536808025221/sj2528Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
C26H26N2O4F000 = 456
Mr = 430.49Dx = 1.393 Mg m3
Monoclinic, C2/mMo Kα radiation λ = 0.71073 Å
Hall symbol: -C 2yCell parameters from 21067 reflections
a = 8.5410 (2) Åθ = 1.0–27.5º
b = 6.6780 (2) ŵ = 0.09 mm1
c = 18.4270 (9) ÅT = 293 (2) K
β = 102.4790 (18)ºBlock, orange
V = 1026.19 (6) Å30.35 × 0.25 × 0.17 mm
Z = 2
Nonius KappaCCD diffractometer1227 independent reflections
Radiation source: fine-focus sealed tube787 reflections with I > 2σ(I)
Monochromator: graphiteRint = 0.087
Detector resolution: 9 pixels mm-1θmax = 27.4º
T = 293(2) Kθmin = 4.3º
φ and ω scansh = −10→10
Absorption correction: nonek = −8→8
3354 measured reflectionsl = −23→20
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.067H-atom parameters constrained
wR(F2) = 0.182  w = 1/[σ2(Fo2) + (0.0638P)2 + 1.0546P] where P = (Fo2 + 2Fc2)/3
S = 1.06(Δ/σ)max < 0.001
1227 reflectionsΔρmax = 0.39 e Å3
91 parametersΔρmin = −0.29 e Å3
Primary atom site location: structure-invariant direct methodsExtinction correction: none
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
xyzUiso*/Ueq
O10.2160 (3)0.00000.28476 (12)0.0594 (8)
O20.7630 (3)0.00000.33332 (13)0.0647 (8)
N10.4894 (3)0.00000.30625 (13)0.0431 (7)
C10.6391 (4)0.00000.35566 (18)0.0457 (8)
C20.6418 (3)0.00000.43622 (17)0.0422 (8)
C30.7854 (4)0.00000.48703 (18)0.0510 (9)
H30.88060.00000.47030.061*
C40.4979 (3)0.00000.46157 (16)0.0384 (7)
C50.2086 (4)0.00000.43639 (18)0.0494 (9)
H50.11000.00000.40300.059*
C60.3486 (3)0.00000.41020 (17)0.0410 (7)
C70.3427 (4)0.00000.32968 (18)0.0446 (8)
C80.4868 (4)0.00000.22507 (16)0.0460 (8)
H80.59910.00000.22070.055*
C90.4125 (3)0.1896 (4)0.18665 (13)0.0591 (7)
H9A0.46840.30600.21100.071*
H9B0.30100.19860.19010.071*
C100.4238 (3)0.1862 (5)0.10529 (14)0.0708 (9)
H10A0.36990.30310.08030.085*
H10B0.53560.19260.10220.085*
C110.3488 (5)0.00000.0665 (2)0.0664 (11)
H11A0.36240.00000.01560.080*
H11B0.23480.00000.06540.080*
U11U22U33U12U13U23
O10.0365 (12)0.088 (2)0.0494 (14)0.0000.0005 (9)0.000
O20.0363 (12)0.105 (2)0.0535 (14)0.0000.0113 (10)0.000
N10.0330 (12)0.0522 (17)0.0428 (14)0.0000.0052 (10)0.000
C10.0323 (15)0.051 (2)0.0514 (19)0.0000.0047 (12)0.000
C20.0322 (15)0.0478 (19)0.0456 (18)0.0000.0066 (12)0.000
C30.0296 (15)0.071 (2)0.0513 (19)0.0000.0072 (12)0.000
C40.0309 (14)0.0364 (16)0.0459 (16)0.0000.0040 (11)0.000
C50.0292 (14)0.065 (2)0.0503 (19)0.0000.0012 (12)0.000
C60.0303 (15)0.0445 (18)0.0460 (17)0.0000.0033 (12)0.000
C70.0357 (15)0.0466 (19)0.0491 (18)0.0000.0038 (13)0.000
C80.0379 (15)0.059 (2)0.0403 (17)0.0000.0059 (12)0.000
C90.0643 (15)0.0483 (15)0.0601 (16)−0.0050 (13)0.0033 (11)0.0031 (12)
C100.0716 (17)0.080 (2)0.0561 (16)−0.0103 (17)0.0045 (12)0.0170 (15)
C110.056 (2)0.094 (3)0.047 (2)0.0000.0059 (16)0.000
O1—C71.212 (3)C5—H50.9300
O2—C11.216 (4)C6—C71.474 (4)
N1—C11.401 (4)C8—C9ii1.521 (3)
N1—C71.411 (4)C8—C91.521 (3)
N1—C81.491 (4)C8—H80.9800
C1—C21.480 (4)C9—C101.523 (3)
C2—C31.373 (4)C9—H9A0.9700
C2—C41.406 (4)C9—H9B0.9700
C3—C5i1.401 (4)C10—C111.506 (4)
C3—H30.9300C10—H10A0.9700
C4—C4i1.409 (6)C10—H10B0.9700
C4—C61.415 (4)C11—C10ii1.506 (4)
C5—C61.382 (4)C11—H11A0.9700
C5—C3i1.401 (4)C11—H11B0.9700
C1—N1—C7123.2 (3)N1—C8—C9ii112.42 (17)
C1—N1—C8117.8 (3)N1—C8—C9112.42 (17)
C7—N1—C8119.0 (2)C9ii—C8—C9112.7 (3)
O2—C1—N1121.3 (3)N1—C8—H8106.2
O2—C1—C2120.9 (3)C9ii—C8—H8106.2
N1—C1—C2117.8 (3)C9—C8—H8106.2
C3—C2—C4119.3 (3)C8—C9—C10109.7 (2)
C3—C2—C1120.1 (3)C8—C9—H9A109.7
C4—C2—C1120.5 (3)C10—C9—H9A109.7
C2—C3—C5i121.3 (3)C8—C9—H9B109.7
C2—C3—H3119.3C10—C9—H9B109.7
C5i—C3—H3119.3H9A—C9—H9B108.2
C2—C4—C4i120.0 (3)C11—C10—C9111.6 (3)
C2—C4—C6120.3 (3)C11—C10—H10A109.3
C4i—C4—C6119.7 (3)C9—C10—H10A109.3
C6—C5—C3i120.4 (3)C11—C10—H10B109.3
C6—C5—H5119.8C9—C10—H10B109.3
C3i—C5—H5119.8H10A—C10—H10B108.0
C5—C6—C4119.3 (3)C10—C11—C10ii111.3 (3)
C5—C6—C7120.5 (3)C10—C11—H11A109.4
C4—C6—C7120.2 (3)C10ii—C11—H11A109.4
O1—C7—N1120.8 (3)C10—C11—H11B109.4
O1—C7—C6121.2 (3)C10ii—C11—H11B109.4
N1—C7—C6118.0 (2)H11A—C11—H11B108.0
C7—N1—C1—O2180.0C2—C4—C6—C70.0
C8—N1—C1—O20.0C4i—C4—C6—C7180.0
C7—N1—C1—C20.0C1—N1—C7—O1180.0
C8—N1—C1—C2180.0C8—N1—C7—O10.0
O2—C1—C2—C30.0C1—N1—C7—C60.0
N1—C1—C2—C3180.0C8—N1—C7—C6180.0
O2—C1—C2—C4180.0C5—C6—C7—O10.0
N1—C1—C2—C40.0C4—C6—C7—O1180.0
C4—C2—C3—C5i0.000 (1)C5—C6—C7—N1180.0
C1—C2—C3—C5i180.0C4—C6—C7—N10.0
C3—C2—C4—C4i0.0C1—N1—C8—C9ii115.76 (19)
C1—C2—C4—C4i180.0C7—N1—C8—C9ii−64.24 (19)
C3—C2—C4—C6180.0C1—N1—C8—C9−115.76 (19)
C1—C2—C4—C60.0C7—N1—C8—C964.24 (19)
C3i—C5—C6—C40.000 (1)N1—C8—C9—C10176.2 (2)
C3i—C5—C6—C7180.0C9ii—C8—C9—C10−55.5 (4)
C2—C4—C6—C5180.0C8—C9—C10—C1155.2 (3)
C4i—C4—C6—C50.000 (1)C9—C10—C11—C10ii−56.5 (4)
  3 in total

1.  High-mobility air-stable n-type semiconductors with processing versatility: dicyanoperylene-3,4:9,10-bis(dicarboximides).

Authors:  Brooks A Jones; Michael J Ahrens; Myung-Han Yoon; Antonio Facchetti; Tobin J Marks; Michael R Wasielewski
Journal:  Angew Chem Int Ed Engl       Date:  2004-11-26       Impact factor: 15.336

2.  A short history of SHELX.

Authors:  George M Sheldrick
Journal:  Acta Crystallogr A       Date:  2007-12-21       Impact factor: 2.290

3.  A soluble and air-stable organic semiconductor with high electron mobility

Authors: 
Journal:  Nature       Date:  2000-03-30       Impact factor: 49.962

  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.