Literature DB >> 21178253

Scalable network electrical devices using ZnO nanowalls.

Chul-Ho Lee1, Yong-Jin Kim, Joohyung Lee, Young Joon Hong, Jong-Myeong Jeon, Miyoung Kim, Seunghun Hong, Gyu-Chul Yi.   

Abstract

We report the fabrication and electrical characteristics of scalable nanowall network devices and their gas sensor applications. For the network device fabrications, two-dimensional ZnO nanowall networks were grown on AlN/Si substrates with a patterned SiO(2) mask layer using selective-area metal-organic vapor-phase epitaxy. The ZnO nanowalls with c-axis orientation were heteroepitaxially grown on AlN/Si substrates, and were single-crystalline, as determined by x-ray diffraction and transmission electron microscopy. The electrical conductivity of the nanowall networks was measured as a function of nanowall dimensions. The conductance increased linearly with the channel width for widths larger than 1 µm, but saturated at 36 µS for widths below 1 µm. This conductance scaling behavior is explained by enhanced conduction through the regions near the edge of the patterned growth areas, where the density of the networks was higher. Gas sensor applications were investigated using the nanowall network devices, and highly sensitive gas detection was demonstrated.

Entities:  

Year:  2010        PMID: 21178253     DOI: 10.1088/0957-4484/22/5/055205

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  2 in total

1.  Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

Authors:  Aihua Zhong; Kazuhiro Hane
Journal:  Nanoscale Res Lett       Date:  2012-12-27       Impact factor: 4.703

2.  Simple fabrication process for 2D ZnO nanowalls and their potential application as a methane sensor.

Authors:  Tse-Pu Chen; Sheng-Po Chang; Fei-Yi Hung; Shoou-Jinn Chang; Zhan-Shuo Hu; Kuan-Jen Chen
Journal:  Sensors (Basel)       Date:  2013-03-20       Impact factor: 3.576

  2 in total

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