Literature DB >> 21177036

Broadening the applications of the atom probe technique by ultraviolet femtosecond laser.

K Hono1, T Ohkubo, Y M Chen, M Kodzuka, K Oh-ishi, H Sepehri-Amin, F Li, T Kinno, S Tomiya, Y Kanitani.   

Abstract

Laser assisted field evaporation using ultraviolet (UV) wavelength gives rise to better mass resolution and signal-to-noise ratio in atom probe mass spectra of metals, semiconductors and insulators compared to infrared and green lasers. Combined with the site specific specimen preparation techniques using the lift-out and annular Ga ion milling in a focused ion beam machine, a wide variety of materials including insulating oxides can be quantitatively analyzed by the three-dimensional atom probe using UV laser assisted field evaporation. After discussing laser irradiation conditions for optimized atom probe analyses, recent atom probe tomography results on oxides, semiconductor devices and grain boundaries of sintered magnets are presented.
Copyright © 2010 Elsevier B.V. All rights reserved.

Year:  2010        PMID: 21177036     DOI: 10.1016/j.ultramic.2010.11.020

Source DB:  PubMed          Journal:  Ultramicroscopy        ISSN: 0304-3991            Impact factor:   2.689


  2 in total

1.  Field Ion Emission in an Atom Probe Microscope Triggered by Femtosecond-Pulsed Coherent Extreme Ultraviolet Light.

Authors:  Ann N Chiaramonti; Luis Miaja-Avila; Benjamin W Caplins; Paul T Blanchard; David R Diercks; Brian P Gorman; Norman A Sanford
Journal:  Microsc Microanal       Date:  2020-04       Impact factor: 4.127

2.  Breaking the icosahedra in boron carbide.

Authors:  Kelvin Y Xie; Qi An; Takanori Sato; Andrew J Breen; Simon P Ringer; William A Goddard; Julie M Cairney; Kevin J Hemker
Journal:  Proc Natl Acad Sci U S A       Date:  2016-10-06       Impact factor: 11.205

  2 in total

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