| Literature DB >> 21121303 |
Ewerton Ramos Granhen1, Marcos Allan Leite Reis, Fabrício M Souza, Jordan Del Nero.
Abstract
We investigate theoretically the charge accumulated Q in a three-terminal molecular device in the presence of an external electric field. Our approach is based on ab initio Hartree-Fock and density functional theory methodology contained in Gaussian package. Our main finding is a negative differential resistance (NDR) in the charge Q as a function of an external electric field. To explain this NDR effect we apply a phenomenological capacitive model based on a quite general system composed of many localized levels (that can be LUMOs of a molecule) coupled to source and drain. The capacitance accounts for charging effects that can result in Coulomb blockade (CB) in the transport. We show that this CB effect gives rise to a NDR for a suitable set of phenomenological parameters, like tunneling rates and charging energies. The NDR profile obtained in both ab initio and phenomenological methodologies are in close agreement.Year: 2010 PMID: 21121303 DOI: 10.1166/jnn.2010.3018
Source DB: PubMed Journal: J Nanosci Nanotechnol ISSN: 1533-4880