Time-resolved photoluminescence measurements of InGaAs/ InP multiple-quantum-well structures at 1.3-µm wavelengths by use of germanium single-photon avalanche photodiodes.

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/lnP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.