Literature DB >> 20972978

Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers.

Jae Chul Park1, Sangwook Kim, Sunil Kim, Changjung Kim, Ihun Song, Youngsoo Park, U-In Jung, Dae Hwan Kim, Jang-Sik Lee.   

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Year:  2010        PMID： 20972978     DOI： 10.1002/adma.201002397

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  7 in total

1.  Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.

Authors:  Sanghun Jeon; Seung-Eon Ahn; Ihun Song; Chang Jung Kim; U-In Chung; Eunha Lee; Inkyung Yoo; Arokia Nathan; Sungsik Lee; John Robertson; Kinam Kim
Journal:  Nat Mater       Date:  2012-02-26       Impact factor: 43.841

2.  Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor.

Authors:  Hong Yoon Jung; Youngho Kang; Ah Young Hwang; Chang Kyu Lee; Seungwu Han; Dae-Hwan Kim; Jong-Uk Bae; Woo-Sup Shin; Jae Kyeong Jeong
Journal:  Sci Rep       Date:  2014-01-20       Impact factor: 4.379

3.  The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors.

Authors:  Young Jun Oh; Hyeon-Kyun Noh; Kee Joo Chang
Journal:  Sci Technol Adv Mater       Date:  2015-05-08       Impact factor: 8.090

4.  Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor.

Authors:  Hyunsuk Woo; Sanghun Jeon
Journal:  Sci Rep       Date:  2017-08-15       Impact factor: 4.379

5.  Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Authors:  Cheol Hyoun Ahn; Karuppanan Senthil; Hyung Koun Cho; Sang Yeol Lee
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

6.  Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.

Authors:  Manh-Cuong Nguyen; Mi Jang; Dong-Hwi Lee; Hyun-Jun Bang; Minjung Lee; Jae Kyeong Jeong; Hoichang Yang; Rino Choi
Journal:  Sci Rep       Date:  2016-04-28       Impact factor: 4.379

7.  The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.

Authors:  Yeonwoo Shin; Sang Tae Kim; Kuntae Kim; Mi Young Kim; Saeroonter Oh; Jae Kyeong Jeong
Journal:  Sci Rep       Date:  2017-09-07       Impact factor: 4.379
  7 in total

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