Literature DB >> 20957700

Electric-field-induced resistive switching in a family of mott insulators: Towards a new class of RRAM memories.

Laurent Cario1, Cristian Vaju, Benoit Corraze, Vincent Guiot, Etienne Janod.   

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Year:  2010        PMID: 20957700     DOI: 10.1002/adma.201002521

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


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  11 in total

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9.  Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing.

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