Literature DB >> 20941101

Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications.

G Zatryb1, A Podhorodecki, X J Hao, J Misiewicz, Y S Shen, M A Green.   

Abstract

The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also proposed that changes observed in the distribution central moments reflect the disorder induced by boron-doping.

Entities:  

Mesh：

Substances：

Year:  2010        PMID： 20941101     DOI： 10.1364/OE.18.022004

Source DB:  PubMed          Journal:  Opt Express        ISSN： 1094-4087            Impact factor:   3.894


  3 in total

1.  On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals.

Authors:  G Zatryb; A Podhorodecki; J Misiewicz; J Cardin; F Gourbilleau
Journal:  Nanoscale Res Lett       Date:  2011-01-31       Impact factor: 4.703

2.  Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects.

Authors:  Daniel Hiller; Julian López-Vidrier; Sebastian Gutsch; Margit Zacharias; Michael Wahl; Wolfgang Bock; Alexander Brodyanski; Michael Kopnarski; Keita Nomoto; Jan Valenta; Dirk König
Journal:  Sci Rep       Date:  2017-08-21       Impact factor: 4.379

3.  Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide.

Authors:  Grzegorz Zatryb; Artur Podhorodecki; Jan Misiewicz; Julien Cardin; Fabrice Gourbilleau
Journal:  Nanoscale Res Lett       Date:  2013-01-21       Impact factor: 4.703
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.