| Literature DB >> 20940931 |
Sven Döring1, Sören Richter, Stefan Nolte, Andreas Tünnermann.
Abstract
For the first time, in situ the hole shape evolution during ultrashort pulse laser drilling in semiconductor material is imaged. The trans-illumination of the sample at a wavelength of 1.06 µm is projected onto a standard CCD camera during the ablation, providing an image of the contour of the ablated structure perpendicular to the irradiation for drilling. This demonstrated technique enables a direct, high resolution investigation of the temporal evolution of the drilling process in the depth of the material without complex sample preparation or post processing.Mesh:
Year: 2010 PMID: 20940931 DOI: 10.1364/OE.18.020395
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894