| Literature DB >> 20931996 |
Arava Leela Mohana Reddy1, Anchal Srivastava, Sanketh R Gowda, Hemtej Gullapalli, Madan Dubey, Pulickel M Ajayan.
Abstract
We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.Entities:
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Year: 2010 PMID: 20931996 DOI: 10.1021/nn101926g
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881