| Literature DB >> 20923234 |
Yee Kan Koh1, Myung-Ho Bae, David G Cahill, Eric Pop.
Abstract
We report the thermal conductance G of Au/Ti/graphene/SiO(2) interfaces (graphene layers 1 ≤ n ≤ 10) typical of graphene transistor contacts. We find G ≈ 25 MW m(-2) K(-1) at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO(2) interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO(2) interfaces acting in series. The temperature dependence of G from 50 ≤ T ≤ 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.Entities:
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Year: 2010 PMID: 20923234 DOI: 10.1021/nl101790k
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189