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Literature DB >> 20872406

Fabrication of n- and p-type organic thin film transistors with minimized gate overlaps by self-aligned nanoimprinting.

Ursula Palfinger¹, Christoph Auner, Herbert Gold, Anja Haase, Johanna Kraxner, Thomas Haber, Meltem Sezen, Werner Grogger, Gerhard Domann, Georg Jakopic, Joachim R Krenn, Barbara Stadlober.

Abstract

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Year: 2010 PMID： 20872406 DOI： 10.1002/adma.201001947

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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3 in total

1. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

Authors: David K Kim; Yuming Lai; Benjamin T Diroll; Christopher B Murray; Cherie R Kagan
Journal: Nat Commun Date: 2012 Impact factor: 14.919

2. Ultra-high gain diffusion-driven organic transistor.

Authors: Fabrizio Torricelli; Luigi Colalongo; Daniele Raiteri; Zsolt Miklós Kovács-Vajna; Eugenio Cantatore
Journal: Nat Commun Date: 2016-02-01 Impact factor: 14.919

3. Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors.

Authors: Karin Zojer; Thomas Rothländer; Johanna Kraxner; Roland Schmied; Ursula Palfinger; Harald Plank; Werner Grogger; Anja Haase; Herbert Gold; Barbara Stadlober
Journal: Sci Rep Date: 2016-09-27 Impact factor: 4.379

3 in total