Literature DB >> 20868110

Epitaxial graphene on SiC(0001): more than just honeycombs.

Y Qi1, S H Rhim, G F Sun, M Weinert, L Li.   

Abstract

Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H(5,6,7)) defects that break the honeycomb symmetry, thereby inducing a gap and states below E(F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice, its interaction with the warped layer modifies )the dispersion about the Dirac point. These results explain recent angle-resolved photoemission and carbon core-level shift data and solve the long-standing problem of the interfacial structure of epitaxial graphene on SiC(0001).

Entities:  

Year:  2010        PMID: 20868110     DOI: 10.1103/PhysRevLett.105.085502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Vibrational Excitations and Low Energy Electronic Structure of Epoxide-decorated Graphene.

Authors:  E C Mattson; J E Johns; K Pande; R A Bosch; S Cui; M Gajdardziska-Josifovska; M Weinert; J H Chen; M C Hersam; C J Hirschmugl
Journal:  J Phys Chem Lett       Date:  2014-01-02       Impact factor: 6.475

2.  Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3.

Authors:  C H Li; O M J van 't Erve; J T Robinson; Y Liu; L Li; B T Jonker
Journal:  Nat Nanotechnol       Date:  2014-02-23       Impact factor: 39.213

3.  Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC.

Authors:  Antoine Tiberj; Nicolas Camara; Philippe Godignon; Jean Camassel
Journal:  Nanoscale Res Lett       Date:  2011-07-29       Impact factor: 4.703

4.  Multiscale investigation of graphene layers on 6H-SiC(000-1).

Authors:  Antoine Tiberj; Jean-Roch Huntzinger; Jean Camassel; Fanny Hiebel; Ather Mahmood; Pierre Mallet; Cecile Naud; Jean-Yves Veuillen
Journal:  Nanoscale Res Lett       Date:  2011-02-24       Impact factor: 4.703

5.  Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3.

Authors:  C H Li; O M J van 't Erve; Y Y Li; L Li; B T Jonker
Journal:  Sci Rep       Date:  2016-07-11       Impact factor: 4.379

6.  Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates.

Authors:  Filipe Matusalem; Daniel S Koda; Friedhelm Bechstedt; Marcelo Marques; Lara K Teles
Journal:  Sci Rep       Date:  2017-11-16       Impact factor: 4.379

7.  Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction.

Authors:  I Razado-Colambo; J Avila; D Vignaud; S Godey; X Wallart; D P Woodruff; M C Asensio
Journal:  Sci Rep       Date:  2018-07-05       Impact factor: 4.379

8.  High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

Authors:  E Pallecchi; F Lafont; V Cavaliere; F Schopfer; D Mailly; W Poirier; A Ouerghi
Journal:  Sci Rep       Date:  2014-04-02       Impact factor: 4.379

  8 in total

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