Literature DB >> 20867257

Evidence for a correlated insulator to antiferromagnetic metal transition in CrN.

P A Bhobe1, A Chainani, M Taguchi, T Takeuchi, R Eguchi, M Matsunami, K Ishizaka, Y Takata, M Oura, Y Senba, H Ohashi, Y Nishino, M Yabashi, K Tamasaku, T Ishikawa, K Takenaka, H Takagi, S Shin.   

Abstract

We investigate the electronic structure of chromium nitride (CrN) across the first-order magnetostructural transition at T(N)∼286  K. Resonant photoemission spectroscopy (PES) shows a gap in the 3d partial density of states at the Fermi level and an on-site Coulomb energy U∼4.5  eV, indicating strong electron-electron correlations. Bulk-sensitive high-resolution (6 meV) laser PES reveals a clear Fermi edge indicating an antiferromagnetic metal below T(N). Hard x-ray Cr 2p core-level PES shows T-dependent changes across T(N) which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. Electrical resistivity confirms an insulator above T(N) (E(g)∼70  meV) becoming a disordered metal below T(N). Thus, CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magnetostructural transition.

Entities:  

Year:  2010        PMID: 20867257     DOI: 10.1103/PhysRevLett.104.236404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Robust ferromagnetism in monolayer chromium nitride.

Authors:  Shunhong Zhang; Yawei Li; Tianshan Zhao; Qian Wang
Journal:  Sci Rep       Date:  2014-06-10       Impact factor: 4.379

2.  Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties.

Authors:  Zhenzhen Hui; Xuzhong Zuo; Longqiang Ye; Xuchun Wang; Xuebin Zhu
Journal:  Materials (Basel)       Date:  2020-01-16       Impact factor: 3.623

  2 in total

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