Literature DB >> 20858929

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

Mi Li1, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen, Run-Wei Li.   

Abstract

The resistive switching (RS) characteristics of a Bi(0.95)La(0.05)FeO(3) (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

Entities:  

Year:  2010        PMID: 20858929     DOI: 10.1088/0957-4484/21/42/425202

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  4 in total

1.  Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

Authors:  Guangyu Wang; Chen Li; Yan Chen; Yidong Xia; Di Wu; Qingyu Xu
Journal:  Sci Rep       Date:  2016-11-14       Impact factor: 4.379

2.  Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

Authors:  Souvik Kundu; Michael Clavel; Pranab Biswas; Bo Chen; Hyun-Cheol Song; Prashant Kumar; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Mohan Sanghadasa; Shashank Priya
Journal:  Sci Rep       Date:  2015-07-23       Impact factor: 4.379

3.  Bending effect on the resistive switching behavior of a NiO/TiO2 p-n heterojunction.

Authors:  Hai-Peng Cui; Jian-Chang Li; Hai-Lin Yuan
Journal:  RSC Adv       Date:  2018-05-30       Impact factor: 3.361

4.  Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Authors:  Yao Shuai; Xin Ou; Wenbo Luo; Arndt Mücklich; Danilo Bürger; Shengqiang Zhou; Chuangui Wu; Yuanfu Chen; Wanli Zhang; Manfred Helm; Thomas Mikolajick; Oliver G Schmidt; Heidemarie Schmidt
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

  4 in total

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