Literature DB >> 20852352

Nanoscale memory devices.

Andy Chung1, Jamal Deen, Jeong-Soo Lee, M Meyyappan.   

Abstract

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO(2).

Entities:  

Year:  2010        PMID: 20852352     DOI: 10.1088/0957-4484/21/41/412001

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  4 in total

1.  High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

Authors:  Jia-Mian Hu; Zheng Li; Long-Qing Chen; Ce-Wen Nan
Journal:  Nat Commun       Date:  2011-11-22       Impact factor: 14.919

2.  Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Authors:  Agnes Gubicza; Dávid Zs Manrique; László Pósa; Colin J Lambert; György Mihály; Miklós Csontos; András Halbritter
Journal:  Sci Rep       Date:  2016-08-04       Impact factor: 4.379

3.  Breaking the Quantum PIN Code of Atomic Synapses.

Authors:  Tímea Nóra Török; Miklós Csontos; Péter Makk; András Halbritter
Journal:  Nano Lett       Date:  2020-01-13       Impact factor: 11.189

4.  Neuromorphic atomic switch networks.

Authors:  Audrius V Avizienis; Henry O Sillin; Cristina Martin-Olmos; Hsien Hang Shieh; Masakazu Aono; Adam Z Stieg; James K Gimzewski
Journal:  PLoS One       Date:  2012-08-06       Impact factor: 3.240

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.