Literature DB >> 20839254

Three-dimensional integration of organic resistive memory devices.

Sunghoon Song1, Byungjin Cho, Tae-Wook Kim, Yongsung Ji, Minseok Jo, Gunuk Wang, Minhyeok Choe, Yung Ho Kahng, Hyunsang Hwang, Takhee Lee.   

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Year:  2010        PMID： 20839254     DOI： 10.1002/adma.201002575

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  9 in total

1.  Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction.

Authors:  Harshada Patil; Honggyun Kim; Shania Rehman; Kalyani D Kadam; Jamal Aziz; Muhammad Farooq Khan; Deok-Kee Kim
Journal:  Nanomaterials (Basel)       Date:  2021-02-01       Impact factor: 5.076

2.  Thermal crosstalk in 3-dimensional RRAM crossbar array.

Authors:  Pengxiao Sun; Nianduan Lu; Ling Li; Yingtao Li; Hong Wang; Hangbing Lv; Qi Liu; Shibing Long; Su Liu; Ming Liu
Journal:  Sci Rep       Date:  2015-08-27       Impact factor: 4.379

3.  Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique.

Authors:  Sangik Lee; Inrok Hwang; Sungtaek Oh; Sahwan Hong; Yeonsoo Kim; Yoonseung Nam; Keundong Lee; Chansoo Yoon; Wondong Kim; Bae Ho Park
Journal:  Sci Rep       Date:  2014-11-03       Impact factor: 4.379

Review 4.  Recent progress in photoactive organic field-effect transistors.

Authors:  Yutaka Wakayama; Ryoma Hayakawa; Hoon-Seok Seo
Journal:  Sci Technol Adv Mater       Date:  2014-04-08       Impact factor: 8.090

5.  Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses.

Authors:  Yu-Pu Lin; Christopher H Bennett; Théo Cabaret; Damir Vodenicarevic; Djaafar Chabi; Damien Querlioz; Bruno Jousselme; Vincent Derycke; Jacques-Olivier Klein
Journal:  Sci Rep       Date:  2016-09-07       Impact factor: 4.379

6.  Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition.

Authors:  Wei Zhang; Ji-Zhou Kong; Zheng-Yi Cao; Ai-Dong Li; Lai-Guo Wang; Lin Zhu; Xin Li; Yan-Qiang Cao; Di Wu
Journal:  Nanoscale Res Lett       Date:  2017-06-08       Impact factor: 4.703

7.  Surface engineering to achieve organic ternary memory with a high device yield and improved performance.

Authors:  Xiang Hou; Xin Xiao; Qian-Hao Zhou; Xue-Feng Cheng; Jing-Hui He; Qing-Feng Xu; Hua Li; Na-Jun Li; Dong-Yun Chen; Jian-Mei Lu
Journal:  Chem Sci       Date:  2016-12-15       Impact factor: 9.825

8.  Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).

Authors:  Jehova Jire L Hmar
Journal:  RSC Adv       Date:  2018-06-05       Impact factor: 3.361

9.  Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Authors:  Yao-Feng Chang; Burt Fowler; Ying-Chen Chen; Fei Zhou; Chih-Hung Pan; Ting-Chang Chang; Jack C Lee
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379
  9 in total

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