Literature DB >> 20803540

Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices.

Ruth Muenstermann1, Tobias Menke, Regina Dittmann, Rainer Waser.   

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Year:  2010        PMID： 20803540     DOI： 10.1002/adma.201001872

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  19 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Adaptive sparse coding based on memristive neural network with applications.

Authors:  Xun Ji; Xiaofang Hu; Yue Zhou; Zhekang Dong; Shukai Duan
Journal:  Cogn Neurodyn       Date:  2019-05-04       Impact factor: 5.082

3.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

4.  Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells.

Authors:  Xianwen Sun; Guoqiang Li; Li Chen; Zihong Shi; Weifeng Zhang
Journal:  Nanoscale Res Lett       Date:  2011-11-23       Impact factor: 4.703

5.  Spectromicroscopic insights for rational design of redox-based memristive devices.

Authors:  Christoph Baeumer; Christoph Schmitz; Amr H H Ramadan; Hongchu Du; Katharina Skaja; Vitaliy Feyer; Philipp Müller; Benedikt Arndt; Chun-Lin Jia; Joachim Mayer; Roger A De Souza; Claus Michael Schneider; Rainer Waser; Regina Dittmann
Journal:  Nat Commun       Date:  2015-10-19       Impact factor: 14.919

6.  Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography.

Authors:  Astrid Marchewka; David Cooper; Christian Lenser; Stephan Menzel; Hongchu Du; Regina Dittmann; Rafal E Dunin-Borkowski; Rainer Waser
Journal:  Sci Rep       Date:  2014-11-10       Impact factor: 4.379

7.  Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Authors:  Xiang Yang; I-Wei Chen
Journal:  Sci Rep       Date:  2012-10-17       Impact factor: 4.379

8.  Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.

Authors:  Baochang Cheng; Zhiyong Ouyang; Chuan Chen; Yanhe Xiao; Shuijin Lei
Journal:  Sci Rep       Date:  2013-11-19       Impact factor: 4.379

9.  Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.

Authors:  Shinbuhm Lee; Abhijeet Sangle; Ping Lu; Aiping Chen; Wenrui Zhang; Jae Sung Lee; Haiyan Wang; Quanxi Jia; Judith L MacManus-Driscoll
Journal:  Adv Mater       Date:  2014-07-28       Impact factor: 30.849

10.  Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases.

Authors:  Woongkyu Lee; Sijung Yoo; Kyung Jean Yoon; In Won Yeu; Hye Jung Chang; Jung-Hae Choi; Susanne Hoffmann-Eifert; Rainer Waser; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-02-02       Impact factor: 4.379
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