| Literature DB >> 20730817 |
Liang Li1, Xiaosheng Fang, Tianyou Zhai, Meiyong Liao, Ujjal K Gautam, Xingcai Wu, Yasuo Koide, Yoshio Bando, Dmitri Golberg.
Abstract
Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.Mesh:
Substances:
Year: 2010 PMID: 20730817 DOI: 10.1002/adma.201001413
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849