Literature DB >> 20707382

Formation and instability of silver nanofilament in Ag-based programmable metallization cells.

Chang-Po Hsiung1, Hsin-Wei Liao, Jon-Yiew Gan, Tai-Bo Wu, Jenn-Chang Hwang, Frederick Chen, Ming-Jinn Tsai.   

Abstract

In this paper, we report on the formation and rupture of Ag nanofilament on planar Ag/TiO2/Pt cells using visual observation. During the forming process, the filament tends to stay very thin. Specifically, it is so thin that it breaks up into a chain of nanospheres (according to Rayleigh instability) right after the formation has been completed. Similar mechanical breakup may also impact vertically stacked cells, causing reliability concerns.

Entities:  

Year:  2010        PMID: 20707382     DOI: 10.1021/nn1010667

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  11 in total

1.  Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

Authors:  Sheikh Ziaur Rahaman; Siddheswar Maikap; Ta-Chang Tien; Heng-Yuan Lee; Wei-Su Chen; Frederick T Chen; Ming-Jer Kao; Ming-Jinn Tsai
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

2.  High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching.

Authors:  Yuan Zhu; Jia-Sheng Liang; Vairavel Mathayan; Tomas Nyberg; Daniel Primetzhofer; Xun Shi; Zhen Zhang
Journal:  ACS Appl Mater Interfaces       Date:  2022-04-27       Impact factor: 10.383

3.  Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory.

Authors:  Seung-Won Yeom; Banseok You; Karam Cho; Hyun Young Jung; Junsu Park; Changhwan Shin; Byeong-Kwon Ju; Jong-Woong Kim
Journal:  Sci Rep       Date:  2017-06-13       Impact factor: 4.379

4.  Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities.

Authors:  Gianluca Milano; Michael Luebben; Zheng Ma; Rafal Dunin-Borkowski; Luca Boarino; Candido F Pirri; Rainer Waser; Carlo Ricciardi; Ilia Valov
Journal:  Nat Commun       Date:  2018-12-04       Impact factor: 14.919

5.  TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices.

Authors:  Katarzyna Bejtka; Gianluca Milano; Carlo Ricciardi; Candido F Pirri; Samuele Porro
Journal:  ACS Appl Mater Interfaces       Date:  2020-06-22       Impact factor: 9.229

6.  A distributed nanocluster based multi-agent evolutionary network.

Authors:  Liying Xu; Jiadi Zhu; Bing Chen; Zhen Yang; Keqin Liu; Bingjie Dang; Teng Zhang; Yuchao Yang; Ru Huang
Journal:  Nat Commun       Date:  2022-08-10       Impact factor: 17.694

7.  Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices.

Authors:  D S Hong; Y S Chen; Ying Li; H W Yang; L L Wei; B G Shen; J R Sun
Journal:  Sci Rep       Date:  2014-02-11       Impact factor: 4.379

8.  TaOx-based resistive switching memories: prospective and challenges.

Authors:  Amit Prakash; Debanjan Jana; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2013-10-09       Impact factor: 4.703

9.  An artificial nociceptor based on a diffusive memristor.

Authors:  Jung Ho Yoon; Zhongrui Wang; Kyung Min Kim; Huaqiang Wu; Vignesh Ravichandran; Qiangfei Xia; Cheol Seong Hwang; J Joshua Yang
Journal:  Nat Commun       Date:  2018-01-29       Impact factor: 14.919

10.  A Bioinspired Artificial Injury Response System Based on a Robust Polymer Memristor to Mimic a Sense of Pain, Sign of Injury, and Healing.

Authors:  Xiaojie Xu; En Ju Cho; Logan Bekker; A Alec Talin; Elaine Lee; Andrew J Pascall; Marcus A Worsley; Jenny Zhou; Caitlyn C Cook; Joshua D Kuntz; Seongkoo Cho; Christine A Orme
Journal:  Adv Sci (Weinh)       Date:  2022-03-25       Impact factor: 17.521

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