Literature DB >> 20677188

Diffusion of adhesion layer metals controls nanoscale memristive switching.

J Joshua Yang1, John Paul Strachan, Qiangfei Xia, Douglas A A Ohlberg, Philip J Kuekes, Ronald D Kelley, William F Stickle, Duncan R Stewart, Gilberto Medeiros-Ribeiro, R Stanley Williams.   

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Year:  2010        PMID： 20677188     DOI： 10.1002/adma.201000663

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  7 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

Authors:  Hai Yang Peng; Yong Feng Li; Wei Nan Lin; Yu Zhan Wang; Xing Yu Gao; Tom Wu
Journal:  Sci Rep       Date:  2012-06-07       Impact factor: 4.379

3.  Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.

Authors:  Tiangui You; Xin Ou; Gang Niu; Florian Bärwolf; Guodong Li; Nan Du; Danilo Bürger; Ilona Skorupa; Qi Jia; Wenjie Yu; Xi Wang; Oliver G Schmidt; Heidemarie Schmidt
Journal:  Sci Rep       Date:  2015-12-22       Impact factor: 4.379

4.  Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Authors:  Yao Shuai; Xin Ou; Wenbo Luo; Arndt Mücklich; Danilo Bürger; Shengqiang Zhou; Chuangui Wu; Yuanfu Chen; Wanli Zhang; Manfred Helm; Thomas Mikolajick; Oliver G Schmidt; Heidemarie Schmidt
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

5.  Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process.

Authors:  Yongcheol Jo; Kyooho Jung; Jongmin Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; Jinpyo Hong; Jeon-Kook Lee; Hyunsik Im
Journal:  Sci Rep       Date:  2014-12-08       Impact factor: 4.379

6.  Kinetically driven switching and memory phenomena at the interface between a proton-conductive electrolyte and a titanium electrode.

Authors:  Takashi Hibino; Kazuyo Kobayashi; Masahiro Nagao
Journal:  Sci Rep       Date:  2016-08-16       Impact factor: 4.379

7.  Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.

Authors:  Hao Jiang; Lili Han; Peng Lin; Zhongrui Wang; Moon Hyung Jang; Qing Wu; Mark Barnell; J Joshua Yang; Huolin L Xin; Qiangfei Xia
Journal:  Sci Rep       Date:  2016-06-23       Impact factor: 4.379
  7 in total

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